2012. 5. 4 1/3 semiconductor technical data ktb764 triple diffused pnp transistor revision no : 3 voltage regulator, relay, lamp driver, industrial use features h high voltage : v ceo =-50v(min.). h high current : i c (max.)=-1a. h high transition frequency : f t =150mhz(typ.). h wide area of safe operation. h complementary to ktd863. maximum rating (ta=25 ? ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 2 5 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current dc i c -1 a pulse i cp -2 collector power dissipation p c 1 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -1 a collector cut-off current i ceo v ce =-50v, i b =0 - - -1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 a dc current gain h fe (1) v ce =-2v, i c =-50ma 60 - 320 h fe (2) v ce =-2v, i c =-1a 30 - - collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 - - v collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.2 -0.7 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 20 - pf
2012. 5. 4 2/3 ktb764 revision no : 3 collector output capacitance collector-base voltage v cb (v) v ce(sat) - i c collector current i c (ma) collector current i c (ma) collector-emitter voltage v ce (v) 0 0 i c - v ce -2 -4 -6 -200 -400 -600 -800 -8 i =0ma b collector current i c (ma) dc current gain h fe h fe - i c c ob (pf) transition frequency f t (mhz) collector current i c (ma) f t - i c collector-emitter saturation -10 -12 -1000 i =-1ma b i =-2ma b i =-3ma b i =-4ma b i =-6ma b i =-8ma b i =-10ma b collector-emitter voltage v ce (v) collector current i c (ma) -600 0 0 -400 -200 -0.2 -1000 -800 -1.0 -0.4 -0.6 i =0ma -0.8 b -1.2 i c - v ce i =-2ma b i =-4ma b i =-6ma b i =-10ma b i =-20ma b i =-30ma b i =-50ma b -1 -3 -1k -5k 10 -100 -10 -30 -300 30 50 100 300 500 1k common emitter ta=25 c v =-2v ce 3 100 -1 c ob - v cb -3 -5 -10 -30 -50 -100 5 10 30 50 common emitter f=1mhz ta=25 c -1 -3 -10 -100 10 -300 -30 30 50 100 300 common emitter ta=25 c v =-10v ce -10 -1 -0.01 -0.03 -3 -1k -100 -30 -300 -5k -0.05 -0.1 -0.3 -1.0 -0.5 common emitter ta=25 c voltage v ce(sat) (v) i /i =10 c b
2012. 5. 4 3/3 ktb764 revision no : 3 collector power dissipation 0 0 pc - ta safe operating area collector-emitter voltage v ce (v) -0.5 -1 -3 -10 -0.01 collector current i c (a) -30 -100 -5 -50 -0.005 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 i cp c i max. dc opera tion 1msec 10mse c 100msec 1sec pc (mw) 20 40 60 80 100 120 140 160 200 400 600 800 1k 1.2k 1pulse ambient temperature ta ( c)
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